Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Toshiba transistor silicon npn epitaxial type 2sc2878. Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 3. Datasheets for diodes from 1n251 on and transistors from 2n117 on. Inchange semiconductor isc product specification isc silicon pnp power transistor 2sa1216 description high collectoremitter breakdown voltage vbrceo 180vmin good linearity of hfe complement to type 2sc2922 applications designed for audio and general purpose applications. Operating junction temperature range, tj storage temperature range. If the transistor is a pnp, then the arrow points to the base of the transistor, otherwise it points to the output.
Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 1258. Guide industry part number 2sa719 2sa723 2sa725 2sa726 2sa728 2sa732 2sa733 2sa733p 2sa744a 2sa760. Toshiba transistor silicon pnp epitaxial type pct process 2sa15 power amplifier applications power switching applications low collector saturation voltage. Information source collector info sammler ktt 196970. Marking of electronic components, smd codes 2a, 2a, 2a. Book depository books with free delivery worldwide. Jameco sells 2a npn transistor and more with a lifetime guarantee and same day shipping. Motorola power transistor data book datasheet, cross reference, circuit and application notes in pdf. Silicon pnp transistor epitaxial planar type pct process, 2sa1275 datasheet, 2sa1275 circuit, 2sa1275 data sheet. Jmnic product specification silicon pnp power transistors 2sa1216 description with mt200 package complement to type 2sc2922 applications audio and general purpose pinningsee fig. Unit conditions td delay time 35 tr crise time 35 vcc3v, vbe0. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. Toshiba transistor silicon pnp epitaxial type pct process 2sa965 power amplifier applications driverstage amplifier applications complementary to 2sc2235. Browse our computer products, electronic components, electronic kits.
The 2sa1216 transistor might have a current gain anywhere between 30 and 180. Toshiba power transistor semiconductor data book 1983. Transistor 2sa683, 2sa684 silicon pnp epitaxial planer type for lowfrequency power amplification and driver amplification complementary to 2sc83 and 2sc84 features complementary pair with 2sc83 and 2sc84. Kec, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Silicon pnp epitaxial planar transistor complement to type 2sc4468 application. During soldering, the leads should not be subjected to mechanical stress. Pnp germanium alloy transistor intended as af small power amplifier. Text in other languages may differ dimensions whd incl. For transistors, we need to know the following characteristics. Home page info downloads transistors 2sa if you like what im doing, please consider making a donation. Performance is based on target specifications, simulated results, andor prototype measurements. Collectorbase voltage, v cbo collectoremitter voltage, v emitterbase voltage, v. Here, the distance between soldered joint and case should be at least 4 mm. This pdf datasheet is available through the datasheet archive search engine. Isc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. The gain of the 2sa1216o will be in the range from 30 to 60, 2sa1216y ranges from 50 to 100, 2sa1216p ranges from 70 to 140, 2sa1216g ranges from 90 to 180. Bc327 datasheet, equivalent, cross reference search.
Range of storage temperature 1 pw10ms, single pulse 2 each terminal mounted on a reference land. Lp395 ultra reliable power transistor datasheet texas instruments. You can always remember that the arrow points at the n material. Texas instruments transistor and diode databook 1st ed 1973.
Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Get your questions answered from other customers who own this product or have experience with it. For transistors in plastic case to92 the maximum soldering time is 8 s, at soldering temperatures between 230 and 260 c. When the device is used as an emitter follower with a low source. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. If your question requires design or troubleshooting information, please email email protected for a prompt reply. Toshiba transistor silicon pnp epitaxial type pct process.
If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Tip31a complementary silicon plastic power transistors farnell. Ztx601b silicon planar medium power darlington transistor datasheet. The datasheet archive contains over 100 million electronic component datasheets. Elektronische bauelemente pnp plastic encapsulated transistor. Diodes and transistors pdf 28p this note covers the following topics. Complementary power darlington transistors stmicroelectronics. Discrete semiconductors data sheet book, halfpage m3d186 bc327 pnp general purpose transistor 1999 apr 15 product specification supersedes. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in. The symbol of the transistor has an arrow on the emitter. Data sheets contain information regarding a product macom technology solutions is considering for development. C3063 datasheet, c3063 pdf, c3063 data sheet, datasheet, data sheet, pdf. See detailed ordering and shipping information on page 6 of this data sheet. Datasheet catalog for electronic components integrated.
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